The document, titled "Driving the Gate of a EPC Space Rad Hard eGaN Device," explores the unique features of EPC's gallium nitride (GaN) transistors, which are engineered to function in space and other extreme environments. It emphasizes the critical factors involved in gate drive requirements, such as voltage levels, current capacity, and the impact of high-frequency operation.
A major focus of the application note is enabling engineers to fully harness the benefits of eGaN technology, which delivers significant enhancements in power density, efficiency, and switching speed over traditional silicon-based alternatives. EPC Space underscores that a thorough understanding of gate driving is crucial for maximizing these advantages.
According to the application note, "Proper gate drive is paramount to achieving the full performance potential of EPC Space's Rad Hard eGaN FETs. Engineers must pay close attention to the specific requirements of eGaN technology to ensure reliable and efficient operation in mission-critical applications."
The guide offers detailed instructions on selecting gate drivers, designing gate drive circuits, and managing thermal performance. Additionally, it includes practical examples and design tips to help engineers avoid common mistakes and achieve optimal results.
EPC Space's Rad Hard eGaN devices are meticulously designed for space applications, where reliability and performance are of the utmost importance. The company's products are built to endure the severe conditions of space, including radiation exposure, temperature fluctuations, and high levels of electromagnetic interference.
For more information and to access the full application note here
Related Links
EPC Space
Space Technology News - Applications and Research
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