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Teledyne e2v qualifies Space-Ready 8 GB DDR4 memory chip
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Teledyne e2v qualifies Space-Ready 8 GB DDR4 memory chip
by Erica Marchand
Paris, France (SPX) Jul 17, 2024

Teledyne e2v has announced the successful space qualification of its 8 GB DDR4 memory chip, expanding its edge compute solutions for space applications. This marks the completion of Teledyne e2v's initial DDR4 qualification, including all necessary upscreening activities such as temperature cycling, construction analysis, C-SAM, preconditioning, Temperature Humidity Bias, and radiation testing.

As the demand for compact, high-density memory solutions increases, Teledyne e2v emphasizes that its latest memory chip is compatible with all modern high-end space processing components. These components include processors from AMD/Xilinx VERSAL ACAP, space FPGAs, MPSOCs, Microchip RT PolarFire, and various proprietary ASICs.

The new 8 GB DDR4 memory chip offers ultra-fast, high-density storage in the same form factor and pin compatibility as the smaller 4 GB DDR4 option, making it ideal for next-generation designs. Modern satellite payloads process vast amounts of data continuously. Micro- and Cube-Sats, which face significant constraints on system size and power, also benefit from this advancement. Earth observation and other space missions, which require extensive storage, stress current memory solutions in terms of bandwidth, access time, power consumption, physical size, and capacity.

Thomas Guillemain, Marketing and Business Development Manager for Data Processing Products at Teledyne e2v, stated, "Fast memory is a critical component in modern data-intensive satellites. The new 8 GB part doubles storage density in the same compact form factor of our previous 4 GB. Furthermore, with multiple temperature grades and qualification variants up to NASA level 1, Teledyne e2v has a diverse, ruggedized and versatile space grade portfolio."

The new 8 GB DDR4 memory supports a transfer rate of 2400 MT/s and is immune to single-event latch-up (SEL) up to 60 MeV.cm2/mg. Additionally, the device can withstand a total ionizing dose (TID) of 100 krad and has SEU data up to 60 MeV.cm/mg. Physically, the 8 GB device is available in a package form factor identical to the previous 4 GB version (15mm x 20mm x 1.92mm), thus doubling storage density while maintaining pinout compatibility.

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