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Understanding heat behavior in electronic devices boosts performance by Staff Writers Barcelona, Spain (SPX) Feb 05, 2018
In a paper published last week in the journal Nature Communications, researchers from the Department of Physics and the Department of Electronics Engineering at the UAB, and from the Birck Nanotechnology Center at Purdue University (USA), studied the heating of small current lines placed on top of a silicon substrate, simulating the behavior of current transistors. This work shows how these metal lines heat up in a way that cannot be explained with the laws ruling heat behavior in our everyday experience. A theoretical model developed by students Pol Torres and Alvar Torello, under the supervision of UAB professors Francesc Xavier Alvarez and Xavier Cartoixa, has allowed to explain the experimental observations, showing that heat flow finds it difficult to make a sharp turn when going from metal to the substrate, similar to what would happen in a viscous fluid exiting a tube. This phenomenon makes it more difficult for the metal line to cool, and therefore its temperature rises to values that cannot be explained with present day models. During operation, the most active parts of an electronic device may accumulate high amounts of thermal energy in very localized zones, called Hot Spots. This energy accumulation can be very detrimental to the correct functioning of the device, and represents a bottleneck limiting the performance of current processors. This discovery paves the way to a better thermal management in electronic devices, since the proposed description represents a significative improvement over the models with which device engineers currently work, based on Fourier's law. These results represent a new positive test of the theory of Extended Thermodynamics, developed in the 1990s by UAB professors David Jou and Jose Casas.
Thanks for the memory: NIST takes a deep look at memristors Washington DC (SPX) Feb 05, 2018 In the race to build a computer that mimics the massive computational power of the human brain, researchers are increasingly turning to memristors, which can vary their electrical resistance based on the memory of past activity. Scientists at the National Institute of Standards and Technology (NIST) have now unveiled the long-mysterious inner workings of these semiconductor elements, which can act like the short-term memory of nerve cells. Just as the ability of one nerve cell to signal another de ... read more
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