The effort, supported by the Silicon Crossroads Microelectronics Commons Hub, launches with an initial $2.4 million investment and could receive up to $7.5 million over three years.
NASA's Glenn Research Center has been investigating SiC for decades, demonstrating its ability to endure higher voltages, temperatures, and radiation exposure than conventional silicon semiconductors. With potential applications extending to Venus exploration, NASA Glenn has developed SiC circuits that remain operational at 930 F (500 C) for thousands of hours. Additionally, the center has validated device performance across an extreme temperature range spanning from -310 F (-190 C) to 1,490 F (812 C), a breakthrough with implications for aerospace and defense technologies.
Beyond space exploration, SiC is increasingly utilized in power electronics for electric vehicles and renewable energy systems. However, its resilience in extreme environments remains underutilized in commercial applications. This new initiative aims to refine and scale NASA's manufacturing techniques, increasing the wafer size and making SiC chip design more accessible.
The project unites key industry and government partners, including NASA Glenn, GE Aerospace Research in New York, Ozark Integrated Circuits (Ozark IC) in Arkansas, and Wolfspeed, a North Carolina-based semiconductor manufacturer. While SiC technology has broad applications, this initiative will initially focus on aerospace, particularly in enhancing aircraft engine electronics and sensors. One primary objective is to demonstrate a packaged actuator suitable for aerospace or engine-related applications. Actuators, which convert electrical signals into mechanical motion, are critical to control systems.
"NASA, GE Aerospace, and Ozark IC have developed remarkable technology with far-reaching applications. This project is a vital step toward commercializing that innovation," said Becky Peterson, associate professor of electrical and computer engineering and director of U-M's Lurie Nanofabrication Facility.
She added, "We need advanced semiconductors produced domestically that can operate in extreme high-temperature environments."
The project will advance the fabrication of high-temperature SiC junction field-effect transistors (JFETs), scaling the process from 100-mm to 150-mm wafers. GE Aerospace Research platform leader Aaron Knobloch highlighted the significance of this advancement, stating, "SiC-based high-temperature electronics will be a key enabler for delivering new sensor and actuator functionality that enhances future DoD engine platforms. Expanding temperature capabilities could also open new opportunities in hypersonic applications."
Ozark IC, leveraging years of collaboration with NASA Glenn through Small Business Innovation Research initiatives, will focus on packaging, integration, and process commercialization. The company has demonstrated SiC technology functioning at over 1,400 F (800 C) with advanced packaging methods. This program builds on Ozark IC's work with the Department of Defense and NASA, particularly through DARPA's High Operational Temperature Sensors (HOTS) program, which has supported transitioning SiC JFET-R technology to GE Aerospace's 100-mm facility in New York.
Wolfspeed, a leader in SiC wafer production, will supply the specialized wafers essential for these advancements. The company is currently finalizing a proposed $750 million funding package with the U.S. Department of Commerce to expand its SiC production in North Carolina and New York. Wolfspeed will also provide commercial design consultation to optimize the technology for widespread adoption.
"Ozark IC has long worked with NASA and GE Aerospace to integrate SiC technology into aerospace and energy sectors. We are excited to collaborate with Michigan and Wolfspeed to scale up to 150 mm with advanced packaging and integration," said Matt Francis, CEO and founder of Ozark IC.
Researchers at Michigan Engineering will refine process development kits and transistor models, creating libraries of commonly used circuit blocks to streamline SiC chip design. Their work will enhance accessibility for integrated circuit designers and enable automation in electronic design.
"We will test the devices and circuits developed by NASA and GE Aerospace, packaged by Ozark IC, and work to standardize the manufacturing process," said Peterson. "Our goal is to develop process development kits and open-source electronic design automation (EDA) software to facilitate commercial product design in this emerging technology."
A team led by David Wentzloff, U-M professor of electrical and computer engineering, will expand their open-source tools for designing analog and mixed-signal circuits. These circuits play a crucial role in power management, sensor data conversion, and actuator control in jet engines. While open-source digital design tools are becoming more prevalent, Michigan's approach integrates analog and digital circuit automation for SiC chips.
"Our system differs from previous analog circuit design automation tools," Wentzloff explained. "We leverage established digital design automation tools to accelerate the design of analog and mixed-signal circuits. This makes the technology more accessible and reduces the need for specialized analog circuit expertise."
Silicon-based electronics in engine control systems currently operate at a maximum of 257 F (125 C), requiring complex cooling solutions or strategic placement in cooler regions of the engine. SiC electronics, however, can function within high-temperature areas, eliminating the need for such protective measures. The advancements made through this project will improve sensor and actuator functionality, reduce system weight, and simplify engine electrical architectures. Additionally, SiC's extreme temperature tolerance holds promise for next-generation hypersonic aircraft technologies.
Related Links
University of Michigan
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Nano Technology News From SpaceMart.com
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