In the initial phase, Raytheon's Advanced Technology division will focus on creating diamond and aluminum nitride semiconductor films and incorporating them into electronic devices. The second phase will concentrate on optimizing this technology, scaling it to larger wafer sizes for sensor use.
"This is a significant step forward that will once again revolutionize semiconductor technology," said Colin Whelan, president of Advanced Technology at Raytheon. "Raytheon has extensive proven experience developing similar materials such as Gallium Arsenide and Gallium Nitride for Department of Defense systems. By combining that pioneering history and our expertise in advanced microelectronics, we'll work to mature these materials towards future applications."
UWBGS materials possess distinctive properties that surpass conventional semiconductors, offering improvements in the performance of radio frequency devices like switches, amplifiers, and limiters. Their superior thermal conductivity allows them to operate under higher temperatures and in more demanding environments.
Raytheon's development effort aims to apply UWBGS technology to enhance both current and next-generation radar and communication systems. This includes advancements in cooperative sensing, electronic warfare, directed energy, and high-speed weapon systems, such as hypersonic applications.
The work is being carried out at Raytheon's facility in Andover, Massachusetts.
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