Micross Components introduces new generation of nuclear event detectors

Micross Components introduces new generation of nuclear event detectors
by Clarence Oxford
Los Angeles CA (SPX) Apr 12, 2024

Micross Components, Inc., a prominent provider of microelectronic components and services for critical aerospace, defense, space, and industrial applications, has expanded its ASIC IP portfolio with a new Nuclear Event Detector (NED).

This next-generation device supersedes the existing 40-year-old NED models, providing a significantly enhanced option for high-reliability settings. The newly introduced NED models are ideal for detecting the initial gamma radiation from nuclear events to temporarily shut down and subsequently restart electronic systems, ensuring their survival. Typical applications include missiles, satellites, and ground vehicles.

Produced domestically at the Jazz Semiconductor Trusted Foundry, Inc. (JSTF), a Tower Semiconductor NPB subsidiary, the Micross MYXRHNEDHCJ series NEDs are tailored for both Class H Military and Class K Space applications.

These detectors offer an integrated differential driver which enhances noise immunity, triples radiation dose sensitivity, and reduces response times by 25% compared to older models. Previous models required external drivers that added weight from additional radiation shielding and increased response times by up to 100%.

The enhancements in the Micross NED series include significant reductions in size, weight, and power consumption, a fourfold decrease in minimum dose rate threshold, improved noise immunity, and quicker nuclear event detection.

Additionally, the device features a variety of packaging options and improvements in obsolescence management and reliability through a vertically integrated in-house sourced PIN diode and ASIC.

John Santini, Chief Technology Officer at Micross Components, highlighted the advancements, "Micross' next-generation NED enables faster, more compact, and reliable nuclear event detection capabilities, with improved SWaP, performance, and features, enabled through significant technology and design improvements applied to field proven building blocks.

These new NEDs provide greater safety and security in the protection of critical electronics subjected to a nuclear event, as they are able to recognize events with much greater sensitivity and react much faster to protect electronics than the current decades old NED devices."

Engineering samples of the new NED are expected to be available within 4-6 weeks ARO. A detailed data sheet is available for download from the Micross NED page.