The EPC7009L16SH stands out for its compact, efficient design and ease of implementation, featuring an input logic interface, undervoltage lockout (UVLO) protection, a linear regulator converting 10V to 5.25V, and a high-speed driver capable of switching frequencies up to 3.0 MHz. The IC boasts a total ionizing dose resilience of 1000 kRad and Single Event Effect (SEE) immunity for Linear Energy Transfer (LET) at 84 MeV/mg/cm2, ensuring reliable performance under the harshest conditions.
EPC's GaN transistors are increasingly preferred for space applications demanding high switching frequencies, power efficiency, and radiation resistance. The EPC7009L16SH enables the full exploitation of eGaN High Electron Mobility Transistors (HEMTs), overcoming the limitations of traditional silicon-based drivers by supporting at least four discrete GaN devices from EPC Space.
The integration of GaN technology into a single chip simplifies the design process for engineers, offering space and efficiency gains on printed circuit boards (PCBs) and facilitating a more streamlined assembly.
Max Zafrani, CTO of EPC Space, emphasized the superiority of integrated Rad Hard GaN-on-silicon technology, highlighting its compact design and fulfillment of rigorous space application radiation standards.
The EPC7009L16SH heralds a new era of Rad Hard ICs from EPC and EPC Space, aimed at revolutionizing Rad Hard GaN power conversion. This transition from discrete devices to sophisticated integrated solutions promises unparalleled in-circuit performance and design simplicity for power systems engineers.
Applications for the EPC7009L16SH are diverse, including high-speed DC-DC conversion, motor driving, power switching/actuation, and satellite electrical systems, marking it as a versatile component in space technology. The IC is offered at $350 for 1000-unit engineering model quantities, with Rad Hard space-qualified units priced at $522.
Related Links
EPC Space
Space Technology News - Applications and Research
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