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SEOUL (AFP) Feb 17, 2005 South Korea's Samsung Electronics said Thursday it had produced the world's first prototype of ultra-fast, low-power-consuming computer memory chips that would set the standard for next-generation products. The new 512-Megabit DDR3 (double data rate 3) DRAM (dynamic random access memory) chip can process data at a rate of 1,066 Megabits per second, the data equivalent of 8,000 newspaper pages a second and double the speed of the existing DDR2 DRAM chips. DDR3 will become the standard for the next generation of ultra-fast, low-power-consuming memory chips used in notebook computers, desktops and servers, the semiconductor giant said. "Our success here with DDR3 continues our relentless push to bring the most advanced memory devices to the market at the fastest possible pace," Samsung Senior Vice President Tom Quinn said. The DDR3 prototype is the first memory chip operating on 1.5 volts, making it less of a drain on batteries in an increasingly wireless world, the company said. Samsung will begin the commercial production of the new chip in early next year. Semiconductor market research firm IDC said the first DDR3 DRAMs would be sold in 2006 and the chip would represent 65 percent of the entire global DRAM market by 2009. All rights reserved. copyright 2018 Agence France-Presse. Sections of the information displayed on this page (dispatches, photographs, logos) are protected by intellectual property rights owned by Agence France-Presse. As a consequence, you may not copy, reproduce, modify, transmit, publish, display or in any way commercially exploit any of the content of this section without the prior written consent of Agence France-Presse.
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