Samsung's new technologies include the world's first 70-nanometer, four-gigabit (Gb) NAND flash memory and an 80-nanometer dynamic random access memory (DRAM) device.

The world's largest DRAM maker said it has developed a single chip memory solution, called fusion memory, which takes the multi-chip package and system-in-package concepts a step further to deliver a single design combining memory and logic.

"Stand-alone memory components are facing tough new demands from digital convergence in mobile and digital consumer markets and Samsungs advanced memory solutions will play a key role in enabling new generations of digital products," said Samsungs memory division head Chang Gyu-Hwang.

Samsung said its ground-breaking 4-Gb NAND flash is the fourth generation of NAND flash memory.

At new higher density levels, nonvolatile memory is now a viable choice for solid-state data storage, replacing magnetic tapes and low-density hard disk drives, it said.

NAND flash will target mobile applications, such as notebook PCs, tablet PCs, mobile handsets, MP3 players and PDAs, it said.

Samsung hopes to maintain a 65-percent share in the NAND flash market, which will jump from three billion dollars in 2003 to 16 billion dollars by

The firm also announced a new concept in memory design called fusion memory, an integrated, single-chip that combines high density memory and logic, together with software availability.

SPACE.WIRE