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Hynix, Toshiba to develop new memory device
by Staff Writers
Seoul (AFP) July 13, 2011


South Korea's Hynix Semiconductor and Japanese electronics giant Toshiba said Wednesday they have agreed to jointly develop a next-generation memory device.

The companies said in a statement that the tie-up to develop spin-transfer torque magnetoresistance random access memory (STT-MRAM) technology -- for use in devices such as smartphones -- would help them minimise risk.

Toshiba recognises MRAM as an important next-generation memory technology that could sustain future growth in its semiconductor business, the statement said.

The two companies intend to set up a joint production venture once the technology has been successfully developed, it said.

Hynix CEO Kwon Oh-Chul described MRAM as "a perfect fit" for growing consumer demand for more sophisticated smartphones.

"MRAM is a rare gem full of exciting properties, like ultra high-speed, low-power consumption, and high capacity, and it will play the role of key factor in driving advances in memories," he said.

The two companies said they have also extended a patent cross-licensing and product supply agreements reached in 2007.

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