TriQuint and Lockheed Martin Announce Advanced Gallium Nitride Process

TECH SPACE

TriQuint and Lockheed Martin Advance Gallium Nitride Process

"Gallium nitride has capabilities from L-band up to W-band, making it a very exciting technology for the future of millimeter and microwave applications."

Richardson - Dec 02, 2003
TriQuint Semiconductor and Lockheed Martin today announced breakthrough results for power density, power added efficiency and radio frequency (RF) lifetime for gallium nitride High Electron Mobility Transistor (HEMT) devices. Achieving breakthrough performance and improved reliability is an important step in significant size and weight reductions for radar-based defense applications.

Gallium nitride HEMT devices provide higher power density and efficiency required for high power phased array radar, electronic warfare, missile seeker and communications systems.

"Gallium nitride's more than five-times improvement in power density compared to gallium arsenide devices makes it ideal for high power radar and communications applications," said Dr. Gailon Brehm, TriQuint's military business unit manager. "Gallium nitride has capabilities from L-band up to W-band, making it a very exciting technology for the future of millimeter and microwave applications."

The device's increased power density can be the basis for simplifying radar power distribution in large systems and can greatly reduce operational electrical current. This advancement can lead to significant weight and size reductions in shipboard systems and land-based applications.

TriQuint's new proprietary process increases gallium nitride HEMT power density 50 percent beyond that of more conventional E-beam T-gate devices. In addition, power added efficiency is 10- to 15-points higher, which allows these devices to function with reduced power dissipation and lower operating temperature.

Improved RF lifetime has been demonstrated with this advanced high voltage gate structure as well. The reduced gate leakage and lower electric field in the drain region contribute to the improved RF device lifetime.

"At Lockheed Martin, we have a passion for invention," said Dr. Mahesh Kumar, director of Research and Technology for Lockheed Martin Maritime Systems and Sensors' business in Moorestown, NJ.

"Gallium Nitride will redefine what is possible by providing our customers the reliable, compact, high-powered technology they need to field solid-state phased array radar, space systems and missiles to protect against emerging threats."

TriQuint has worked with gallium nitride since 1999 under the sponsorship of Lockheed Martin. Partners also include General Electric Global Research Center, the University of South Carolina, ATMI, Emcore and Sandia National Labs.

TECH SPACE

Doing Repairs In Space Critical To Deep Space Missions

Huntsville - Nov 11, 2003
Even on the advanced spacecraft of the future, sooner or later things are bound to break. Space travelers on an extended mission to Mars, for example, would need to be ready to do small repairs just in case, soldering this, welding that.

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