Manassas - June 29, 1999 - Lockheed Martin Space Electronics & Communications in Manassas, Virginia has produced the industry's first fully functional radiation hardened 4Mbit SRAM under a contract sponsored by the Defense Threat Reduction Agency.The single-chip device was fabricated in an advanced fully-scaled 0.5 micrometer bulk/epitaxial CMOS process utilizing shallow trench isolation with two fully planarized polysilicon levels and three fully planarized metal levels.
The effective channel length of the transistors is 0.3 micrometer. Cycle times of less than or equal to 20ns with standby current of less than 2mA at nominal 3.3V power supply have been demonstrated at room temperature. Active power dissipation was measured as typically less than 5mW/MHz. The targeted radiation hardness levels are as follows:
Initial prototype offerings of the 512Kx8 SRAM are now available in ceramic 40-lead flat packs. Other packaging options are planned.
The fully-qualified product will be available subsequent to the completion of planned QML qualification, targeted for late 2000.
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