by Staff Writers
Berkeley CA (SPX) Dec 03, 2015
An emerging class of atomically thin materials known as monolayer semiconductors has generated a great deal of buzz in the world of materials science. Monolayers hold promise in the development of transparent LED displays, ultra-high efficiency solar cells, photo detectors and nanoscale transistors. Their downside? The films are notoriously riddled with defects, killing their performance.
But now a research team, led by engineers at the University of California, Berkeley, and Lawrence Berkeley National Laboratory, has found a simple way to fix these defects through the use of an organic superacid. The chemical treatment led to a dramatic 100-fold increase in the material's photoluminescence quantum yield, a ratio describing the amount of light generated by the material versus the amount of energy put in. The greater the emission of light, the higher the quantum yield and the better the material quality.
The researchers enhanced the quantum yield for molybdenum disulfide, or MoS2, from less than 1 percent up to 100 percent by dipping the material into a superacid called bistriflimide, or TFSI.
Their findings, to be published in Science, opens the door to the practical application of monolayer materials, such as MoS2, in optoelectronic devices and high-performance transistors. MoS2 is a mere seven-tenths of a nanometer thick. For comparison, a strand of human DNA is 2.5 nanometers in diameter.
"Traditionally, the thinner the material, the more sensitive it is to defects," said principal investigator Ali Javey, UC Berkeley professor of electrical engineering and computer sciences and a faculty scientist at Berkeley Lab. "This study presents the first demonstration of an optoelectronically perfect monolayer, which previously had been unheard of in a material this thin."
The researchers looked to superacids because, by definition, they are solutions with a propensity to "give" protons, often in the form of hydrogen atoms, to other substances. This chemical reaction, called protonation, has the effect of filling in for the missing atoms at the site of defects as well as removing unwanted contaminants stuck on the surface, the researchers said.
Co-lead authors of the paper are UC Berkeley Ph.D. student Matin Amani, visiting Ph.D. student Der-Hsien Lien and postdoctoral fellow Daisuke Kiriya.
They noted that scientists have been pursuing monolayer semiconductors because of their low absorption of light and their ability to withstand twists, bends and other extreme forms of mechanical deformation, which can enable their use in transparent or flexible devices.
MoS2, specifically, is characterized by molecular layers held together by van der Waals forces, a type of atomic bonding between each layer that is atomically sharp. An added benefit of having a material that is so thin is that it is highly electrically tunable. For applications such as LED displays, this feature may allow devices to be made where a single pixel could emit a wide range of colors rather than just one by varying the amount of voltage applied.
The lead authors added that the efficiency of an LED is directly related to the photoluminescence quantum yield so, in principle, one could develop high-performance LED displays that are transparent when powered off and flexible using the "perfect" optoelectronic monolayers produced in this study.
This treatment also has revolutionary potential for transistors. As devices in computer chips get smaller and thinner, defects play a bigger role in limiting their performance.
"The defect-free monolayers developed here could solve this problem in addition to allowing for new types of low-energy switches," said Javey.
Xiang Zhang and Eli Yablonovitch, faculty members with joint appointments at UC Berkeley's College of Engineering and Berkeley Lab, co-authored this paper. Other co-authors include researchers from National Taiwan University, the University of Texas and the U.S. Army Research Laboratory in Maryland.
University of California - Berkeley
Satellite-based Internet technologies
|The content herein, unless otherwise known to be public domain, are Copyright 1995-2016 - Space Media Network. All websites are published in Australia and are solely subject to Australian law and governed by Fair Use principals for news reporting and research purposes. AFP, UPI and IANS news wire stories are copyright Agence France-Presse, United Press International and Indo-Asia News Service. ESA news reports are copyright European Space Agency. All NASA sourced material is public domain. Additional copyrights may apply in whole or part to other bona fide parties. Advertising does not imply endorsement, agreement or approval of any opinions, statements or information provided by Space Media Network on any Web page published or hosted by Space Media Network. Privacy Statement All images and articles appearing on Space Media Network have been edited or digitally altered in some way. Any requests to remove copyright material will be acted upon in a timely and appropriate manner. Any attempt to extort money from Space Media Network will be ignored and reported to Australian Law Enforcement Agencies as a potential case of financial fraud involving the use of a telephonic carriage device or postal service.|